Process for the production of crossing points for interconnections of semiconductor devices
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United States of America Patent
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Aug 25, 1992
Grant Date -
N/A
app pub date -
Sep 18, 1991
filing date -
Sep 18, 1990
priority date (Note) -
Expired
status (Latency Note)
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Abstract
In a semiconductor device, an inter-level insulating film is formed at solid crossing points between upper level interconnections and lower-level interconnections, excepting via hole portions. This means that mechanical support between interconnection levels is given by solid crossing points between interconnections. For this, a semiconductor device having high durabilities against thermal and mechanical impacts can be obtained. Further, since inter-level regions other than the solid crossing points are made vacant to form a cavity, coupling capacity can be reduced to 1/3 to 1/2 of an ordinary multilevel interconnections wherein inter-level regions are fully filled with an inter-level insulating film.
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