Conducting electrode layers for ferroelectric capacitors in integrated circuits and method
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United States of America Patent
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Aug 25, 1992
Grant Date -
N/A
app pub date -
Jun 13, 1991
filing date -
Jun 13, 1991
priority date (Note) -
Expired
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Abstract
A ferroelectric capacitor for an integrated circuit includes a stack formed by a layer of a noble metal, a layer of a conducting oxide, a layer of a ferroelectric material, another layer of a conducting oxide and another layer of a noble metal. The capacitor can also have another layer of conducting oxide located over the top layer of noble metal and below the first layer of the noble metal. A method of forming the same through establishing one layer over the other and annealing each layer is also disclosed.
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