High-speed heterojunction light-emitting diode
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Sep 1, 1992
Grant Date -
N/A
app pub date -
Apr 4, 1991
filing date -
Apr 4, 1991
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A high-speed heterojunction light-emitting diode is formed by providing a dielectric layer on a heavily doped semiconductor substrate having short minority carrier lifetime. A semiconductor layer of opposite conductivity to the substrate is epitaxially grown through vias in the dielectric layer. This results in a junction area equal to the useful light-emitting area. An electrical contact is formed on the laterally overgrown area of the epitaxially grown material. The diode manufacture is compatible with planar processing techniques commonly used in integrated circuit manufacture.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully