Method of producing a silicon nitride sintered body
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United States of America Patent
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Sep 8, 1992
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app pub date -
Dec 4, 1991
filing date -
Feb 9, 1990
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Abstract
A silicon nitride sintered body having a high strength at high temperatures as well as at room temperature can be provided by the method of the present invention, which includes preparing a raw material consisting of SI.sub.3 N.sub.4 powder, a rare earth element oxide powder, and SiC powder, and at least one of a W compound powder and a Mo compound powder, forming the raw material into a shaped body, and then firing the shaped body in N.sub.2 atmosphere to substantially crystallize the grain boundary phase of the Si.sub.3 N.sub.4 grains. The silicon nitride sintered body includes Si.sub.3 N.sub.4 as a main component, and the remainder of a rare earth element compound, SiC and at least one of a W compound and a Mo compound, the grain boundary phase of Sio.sub.3 N.sub.4 grains consisting substantially of crystal phases. The silicon nitride sintered body is dense and thin in color so that uneven coloring thereof can be decreased.
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