Cyclotron resonance chemical vapor deposition method of forming a halogen-containing diamond on a substrate

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United States of America Patent

PATENT NO 5145711
SERIAL NO

07481720

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Abstract

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Diamond films or i-carbon films can be formed on a surface by virtue of cyclotron resonance chemical vapor deposition. The characteristics such as transmissivity, conductivity and hardness of the films can be easily controlled by introducing a halogen into the films.

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Patent Owner(s)

Patent OwnerAddress
SEMICONDUCTOR ENERGY LABORATORY CO LTDKANAGAWA KANAGAWA

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hayashi, Shigenori Atsugi, JP 85 3991
Yamazaki, Shunpei Tokyo, JP 7534 239327

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