US Patent No: 5,147,819

Number of patents in Portfolio can not be more than 2000

Semiconductor metallization method

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Abstract

A method of applying an alloy layer of predetermined thickness on a semiconductor wafer to fill contact openings having a defined diameter, the method comprising the following steps: chemical vapor depositing (CVD) a layer of elemental metal atop the wafer to a thickness of from 5% to 35% of the defined contact diameter; sputtering a layer of an alloy atop the chemical vapor deposited layer of elemental metal to a thickness which results in the combination of the chemical vapor deposited and sputtered layers having substantially the predetermined overall layer thickness; and combining and intermixing the sputtered alloy layer with the chemical vapor deposited elemental metal layer to form an overall homogenous alloy layer by applying energy to the sputtered alloy layer, the application of energy also filling contact openings and planarizing the homogenous layer. Preferably, the CVD layer has a thickness of from 10% to 20%, and the energy is applied by a scanning pulsed laser.

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First Claim

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Patent Owner(s)

Patent OwnerAddressTotal Patents
MICRON TECHNOLOGY, INC.BOISE, ID18599

International Classification(s)

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  • [Patents Count]

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Doan, Trung T Boise, ID 267 10153
Sandhu, Gurtej S Boise, ID 1115 16699
Yu, Chang Winterville, NC 27 945

Cited Art

Patent Info (Count) # Cites Year
 
HANDOTAI KENKYU SHINKOKAI, KAWAUCHI, SENDAI-SHI, (1)
4,660,062 Insulated gate transistor having reduced channel length 22 1983
 
MITSUBISHI DENKI KABUSHIKI KAISHA (1)
4,923,526 Homogeneous fine grained metal film on substrate and manufacturing method thereof 5 1989

Patent Citation Ranking

Forward Cites

Patent Info (Count) # Cites Year
 
MICRON TECHNOLOGY, INC. (21)
5,756,394 Self-aligned silicide strap connection of polysilicon layers 32 1995
5,730,835 Facet etch for improved step coverage of integrated circuit contacts 24 1996
5,929,526 Removal of metal cusp for improved contact fill 19 1997
5,908,947 Difunctional amino precursors for the deposition of films comprising metals 72 1997
5,861,344 Facet etch for improved step coverage of integrated circuit contacts 23 1997
6,117,761 Self-aligned silicide strap connection of polysilicon layers 19 1997
6,100,185 Semiconductor processing method of forming a high purity <200> grain orientation tin layer and semiconductor processing method of forming a conductive interconnect line 19 1998
6,274,486 Metal contact and process 3 1998
6,602,796 Chemical vapor deposition for smooth metal films 0 1998
5,963,832 Removal of metal cusp for improved contact fill 5 1998
5,985,767 Facet etch for improved step coverage of integrated circuit contacts 5 1999
6,537,427 Deposition of smooth aluminum films 52 1999
6,423,626 Removal of metal cusp for improved contact fill 4 1999
6,413,858 Barrier and electroplating seed layer 15 1999
6,545,357 Metal nitride barrier layer and electroplating seed layer with the same metal as the metal nitride layer 8 2001
6,951,786 Method of forming a stack of refractory metal nitride over refractory metal silicide over silicon 1 2001
6,838,815 Field emission display with smooth aluminum film 2 2002
7,041,595 Method of forming a barrier seed layer with graded nitrogen composition 5 2002
6,638,399 Deposition of smooth aluminum films 2 2002
7,268,481 Field emission display with smooth aluminum film 0 2004
7,052,923 Field emission display with smooth aluminum film 0 2004
 
ROUND ROCK RESEARCH, LLC (19)
5,846,881 Low cost DRAM metallization 29 1995
5,976,976 Method of forming titanium silicide and titanium by chemical vapor deposition 39 1997
6,147,405 Asymmetric, double-sided self-aligned silicide and method of forming the same 48 1998
6,143,362 Chemical vapor deposition of titanium 17 1998
6,137,180 Low cost DRAM metallization 0 1998
6,524,953 Asymmetric, double-sided self-aligned silicide and method of forming the same 9 1999
6,255,209 Methods of forming a contact having titanium formed by chemical vapor deposition 3 1999
6,255,216 Methods of forming a contact having titanium silicide and titanium formed by chemical vapor deposition 13 1999
6,208,033 Apparatus having titanium silicide and titanium formed by chemical vapor deposition 12 1999
6,171,943 Methods of forming a contact having titanium silicide formed by chemical vapor deposition 1 1999
6,284,316 Chemical vapor deposition of titanium 12 2000
6,455,935 Asymmetric, double-sided self-aligned silicide 8 2000
6,472,756 Method of forming titanium silicide and titanium by chemical vapor deposition and resulting apparatus 8 2001
6,940,172 Chemical vapor deposition of titanium 1 2001
6,903,462 Chemical vapor deposition of titanium 1 2001
6,830,820 Chemical vapor deposition of titanium 0 2001
6,830,838 Chemical vapor deposition of titanium 1 2001
6,825,113 Asymmetric, double-sided self-aligned silicide and method of forming the same 1 2002
7,443,032 Memory device with chemical vapor deposition of titanium for titanium silicide contacts 0 2005
 
APPLIED MATERIALS, INC. (17)
5,877,087 Low temperature integrated metallization process and apparatus 34 1995
6,001,420 Semi-selective chemical vapor deposition 48 1996
6,537,905 Fully planarized dual damascene metallization using copper line interconnect and selective CVD aluminum plug 12 1996
6,110,828 In-situ capped aluminum plug (CAP) process using selective CVD AL for integrated plug/interconnect metallization 23 1996
6,139,697 Low temperature integrated via and trench fill process and apparatus 69 1997
6,139,905 Integrated CVD/PVD Al planarization using ultra-thin nucleation layers 5 1997
5,877,086 Metal planarization using a CVD wetting film 33 1997
6,605,531 Hole-filling technique using CVD aluminum and PVD aluminum integration 0 1998
6,355,560 Low temperature integrated metallization process and apparatus 6 1998
6,726,776 Low temperature integrated metallization process and apparatus 4 1999
6,430,458 Semi-selective chemical vapor deposition 5 1999
6,207,558 Barrier applications for aluminum planarization 36 1999
6,458,684 Single step process for blanket-selective CVD aluminum deposition 8 2000
6,368,880 Barrier applications for aluminum planarization 13 2001
6,743,714 Low temperature integrated metallization process and apparatus 1 2002
6,797,620 Method and apparatus for improved electroplating fill of an aperture 3 2002
7,112,528 Fully planarized dual damascene metallization using copper line interconnect and selective CVD aluminum plug 3 2003
 
ASM INTERNATIONAL N.V. (4)
7,153,772 Methods of forming silicide films in semiconductor devices 5 2004
7,691,750 Methods of forming films in semiconductor devices with solid state reactants 1 2006
7,927,942 Selective silicide process 0 2008
8,293,597 Selective silicide process 0 2011
 
ASM AMERICA, INC. (3)
8,278,176 Selective epitaxial formation of semiconductor films 1 2006
8,367,548 Stable silicide films and methods for making the same 0 2008
8,367,528 Cyclical epitaxial deposition and etch 0 2009
 
INTERNATIONAL BUSINESS MACHINES CORPORATION (2)
6,180,480 Germanium or silicon-germanium deep trench fill by melt-flow process 24 1998
6,359,300 High aspect ratio deep trench capacitor having void-free fill 16 2000
 
SAMSUNG ELECTRONICS CO., LTD. (2)
5,318,923 Method for forming a metal wiring layer in a semiconductor device 29 1992
6,699,790 Semiconductor device fabrication method for filling high aspect ratio openings in insulators with aluminum 2 2002
 
LG SEMICON CO., LTD. (1)
5,880,023 Process for formation of wiring layer in semiconductor device 11 1996
 
MEMS OPTICAL, INC. (1)
6,271,802 Three dimensional micromachined electromagnetic device and associated methods 4 1998
 
MICRO TECHNOLOGY, INC. (1)
6,524,951 Method of forming a silicide interconnect over a silicon comprising substrate and method of forming a stack of refractory metal nitride over refractory metal silicide over silicon 6 1999
 
MOSAID TECHNOLOGIES INCORPORATED (1)
6,365,507 Method of forming integrated circuitry 8 1999
 
MOTOROLA, INC. (1)
5,633,199 Process for fabricating a metallized interconnect structure in a semiconductor device 29 1995
 
SIEMENS AKTIENGESELLSCHAFT (1)
6,057,236 CVD/PVD method of filling structures using discontinuous CVD AL liner 8 1998
 
SONY CORPORATION (1)
5,702,983 Method for manufacturing a semiconductor device with a metallic interconnection layer 6 1996
 
OTHER [CHECK PATENT PROFILE FOR ASSIGNMENT INFORMATION] (1)
6,759,324 Method of forming a low resistance contact to underlying aluminum interconnect by depositing titanium in a via opening and reacting the titanium with the aluminum 1 2000