Method of making polycrystalline silicon resistors for integrated circuits
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United States of America Patent
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Sep 29, 1992
Grant Date -
N/A
app pub date -
May 31, 1990
filing date -
May 31, 1990
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A method for fabricating polycrystalline silicon resistor structures includes steps directed to the provision of a polycrystalline silicon structure having a decreased width. In one embodiment, sidewall spacers are used to narrow a region in which the polycrystalline silicon resistors are formed. In an alternative embodiment, polycrystalline silicon resistors are formed as sidewall structures in a resistor region. Use of either technique provides a reduced cross-section for the resistor structures, allowing shorter resistors to be used, or providing increased resistance for longer resistors.
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