Apparatus and method for producing silicon single crystal
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United States of America Patent
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Oct 6, 1992
Grant Date -
N/A
app pub date -
Jul 19, 1990
filing date -
Mar 12, 1990
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
An apparatus and a method for producing a silicon single crystal by the Czochralski method, whereby the silicon single crystal is pulled up from a crucible while the crucible is heated by a side heater in the lateral periphery of the crucible and a bottom heater facing the bottom of the crucible. The outputs of the side heater and bottom heater are controlled independently of each other so that an oxygen concentration in the pull-up direction of the pulled-up silicon single crystal is rendered uniform. In addition to the output control of the heaters, a magnetic field is applied to a molten liquid in the crucible, so that, a dopant concentration in a radial direction of the pulled-up silicon single crystal is rendered uniform.
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