Semiconductor gate-controlled high-power capability bipolar device
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United States of America Patent
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Oct 6, 1992
Issued Date -
N/A
app pub date -
Sep 10, 1990
filing date -
Apr 30, 1986
priority date (Note) -
Expired
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Abstract
A gate-turn-off power semiconductor device of the GTO or FCTh type, having a control zone of alternately arranged finely subdivided cathode fingers and gate trenches, wherein the gate trenches are constructed as narrow deep slots, preferably by a crystal-direction-selective wet chemical etching process, while the original substrate surface is retained in the remaining area of the semiconductor substrate. Compared with the conventional 'recessed-gate' construction, this quasi-planar construction offers a number of advantages in the electrical behavior, in the integration of auxiliary functions and in the production.
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