Amorphous photoconductive material and photosensor employing the photoconductive material
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United States of America Patent
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Oct 13, 1992
Grant Date -
N/A
app pub date -
Dec 28, 1990
filing date -
Jan 17, 1990
priority date (Note) -
Expired
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Abstract
A photoconductive material comprises a photocarrier generating zone using a wide-band gap material and a photocarrier moving zone using an amorphous silicon material. A photocarrier generating zone including a silicon atom as a principal atom comprises an amorphous silicon which contains at least one kind of atom selected from a group including oxygen, nitrogen and carbon and also contains an atom which terminates a dangling bond of a silicon. This photoconductive material can be used for various devices because of its wide-band gap and high photosensitivity.
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