Ferroelectric capacitor and a semiconductor device having the same
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United States of America Patent
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Oct 13, 1992
Grant Date -
N/A
app pub date -
Dec 24, 1990
filing date -
Dec 25, 1989
priority date (Note) -
Expired
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Abstract
A ferroelectric capacitor includes a ferroelectric layer consisting of lead zirconate titanate formed on a silicon substrate, a plurality of rectangular trenches formed in the direction of thickness of the ferroelectric layer with a ferroelectric material therebetween, and first and second electrodes consisting of metal tungsten buried in the trenches to oppose each other with the ferroelectric material therebetween.
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