Insulated gate device with current mirror having bi-directional capability
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United States of America Patent
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Oct 27, 1992
Issued Date -
N/A
app pub date -
Jul 31, 1990
filing date -
Jun 8, 1988
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A technique for providing dual direction current sensing with a single current mirror configured to provide the same current ratio in both directions for at least one predetermined temperature. The invention contemplates any of a number of techniques for providing relatively increased diode conduction in the mirror in order to provide the same current ratio as when channel conduction is the sole mechanism. These include increasing the doping of the cell body, increasing the diode area per cell relative to the amount of MOS channel area, providing extra diode cells in the mirror, or locating the current mirror in the hottest part of the chip where diode conduction is greatest.
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