Scanning electron microscope based parametric testing method and apparatus
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United States of America Patent
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Nov 3, 1992
Issued Date -
N/A
app pub date -
Nov 30, 1990
filing date -
Mar 22, 1989
priority date (Note) -
Expired
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Abstract
A scanning electron microscope (28) is connected to a test structure (48) formed on a semiconductor wafer. The test structure (48) comprises a plurality of first parallel structures (54) and a plurality of second parallel structure (56) transverse to and interlocking with the first structures (54). An island (60) is formed within a grid (58) formed by the structures (54-56) and is separated therefrom. An electron beam (38) from the scanning electron microscope (28) is aimed at the structure (48) and secondary electrons emitted therefrom are visually displayed on a monitor (44). The visual display (47) provides information on whether the island (60) is electrically separated from the mesh (58) or shorted thereto by comparing the intensity of the various islands (60).
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