Hall device
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United States of America Patent
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-
Nov 10, 1992
Grant Date -
N/A
app pub date -
May 9, 1991
filing date -
May 21, 1990
priority date (Note) -
In Force
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Abstract
A Hall device having an active part made from semiconductor diamond. The Hall device works even at high temperature or in corrosive atmosphere. Boron doped diamond is suitable for controlling the acceptor concentration.
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