Laser diode array and manufacturing method thereof
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Nov 10, 1992
Grant Date -
N/A
app pub date -
May 10, 1991
filing date -
Feb 6, 1991
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
The present invention relates a laser diode array and its manufacturing method. After formation of V-channels on an N-type GaAs substrate, each layer is formed by molecular beam epitaxy technique. By using that Si acts as P-type dopant on {111} A surface of V-channel, while acting as N-type dopant on {100} surface of the outside of V-channel, a laser array structure is improved. Thus, the present invention is useful in obtaining stable optical output efficiency and mode control, yield improvement, reproducibility, and high output laser beam.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully