Importance

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Abstract

A method of forming an interconnect, particularly a local interconnect, for a silicon substrate having integrated circuit devices between dielectric regions. Titanium disilicide is formed on electrode regions of the integrated circuit devices, whereafter titanium-tungsten is deposited across the silicon substrate. A photomask is formed and patterned to cover selected portions of the titanium-tungsten layer. The uncovered portions receive a preliminary etch of chlorine and carbon tetrafluoride to remove oxide. A second etch using trifluoromethane and oxygen removes the uncovered portions, leaving an electrically conductive interconnect extending from an electrode region onto a dielectric region leading to a second electrode region. The photomask is then removed.

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First Claim