Method of fabricating a base-coupled transistor logic
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United States of America Patent
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Nov 24, 1992
Issued Date -
N/A
app pub date -
Jun 18, 1990
filing date -
Sep 14, 1984
priority date (Note) -
Expired
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Abstract
A base-coupled logic gate is characterized by input Schottky diodes that are directly formed on the base region of the switching transistor for the gate. A logic of this type provides flexible circuit arrangements and savings in required area, while achieving very high speeds. As a result of the savings in area, the buried layer capacitance of the gate is also reduced, which facilitates the high-speed operation of the circuit.
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