Process for fabricating self-aligned contact studs for semiconductor structures
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United States of America Patent
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Nov 24, 1992
Issued Date -
N/A
app pub date -
Apr 14, 1992
filing date -
Oct 29, 1991
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A contact stud for semiconductor structure is fabricated by providing a semiconductor substrate having an alignment structure, which includes a sidewall, and the semiconductor structure formed thereon, forming a sidewall spacer contiguous with the semiconductor structure and the sidewall of the alignment structure, depositing an insulating layer contiguous with the sidewall spacer so as to insulate the semiconductor structure, etching the sidewall spacer selectively to the sidewall of the alignment structure, the semiconductor structure and the insulating layer forming a contact window opening for allowing access to the semiconductor structure, and backfilling the contact window opening with a conductive material so as to contact the semiconductor structure for forming the stud.
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