SRAM memory cell

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United States of America Patent

PATENT NO 5166902
SERIAL NO

07670557

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A compact SRAM memory cell employs two invertor areas longitudinally offset along a longitudinal axis and having transistor gates interdigitated, with a gate electrode of one invertor extending perpendicular to the longitudinal axis to make contact with the output node of the other invertor. Adjacent cells are related by a 180.degree. rotation through a transverse edge and a reflection through a longitudinal edge.

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Patent Owner(s)

Patent OwnerAddress
UTMC MICROELECTRONIC SYSTEMS INC4350 CENTENNIAL BOULEVARD A DELAWARE CORPORATION COLORADO SPRINGS CO 80907

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Silver, John Colorado Springs, CO 5 65

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