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Abstract

A method and apparatus for growing semiconductor quality oxide thermal layers on semiconductor wafers fast enough to be economically feasible as a batch wafer process system. Process speed is insured by high pressure and high temperature. For example, if the pressure is about 10 to 25 atmospheres and at a temperature of 600.degree. C. to 1100.degree. C., approximately 90.0 minutes are required to grow a 5,000 .ANG. oxide layer on about 50 wafers in a steam environment. The system can reach these operating conditions from ambient in approximately 17 minutes and depressurization and cool down require approximately 22 minutes. The apparatus includes a processing chamber to be pressurized with an oxidant, such as high pressure steam or oxygen. The process chamber is contained in a pressure vessel adapted to be pressurized with an inert gas, such as nitrogen, to a high pressure. A pressure control scheme is used to keep the fluid pressure of the process chamber slightly less than the pressure of the fluid pressure vessel. The pressure control permits the use of thin walls of quartz for defining the process chamber.

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First Claim