Anisotropic etch method
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United States of America Patent
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Dec 1, 1992
Grant Date -
N/A
app pub date -
Jan 2, 1991
filing date -
Jan 2, 1991
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A method to anisotropically etch an oxide/poly/oxide or an oxide/poly/oxide sandwich structure on a silicon wafer substrate in situ, that is, using a single parallel plate plasma reactor chamber and a single inert cathode, with a variable gap between cathode and anode. This method has an oxide etch step and a silicide/poly etch step. In the poly removal step, helium is added to improve etch uniformity. The pressure, power, and various gas quantities are balanced to produce the fastest etch rates while preserving selectivity. The fully etched sandwich structure has a vertical profile at or near 90.degree. from horizontal.
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