Power metal-oxide-semiconductor field effect transistor
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United States of America Patent
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Dec 1, 1992
Issued Date -
N/A
app pub date -
Jan 31, 1991
filing date -
Jan 31, 1991
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A metal-oxide-semiconductor field effect transistor constructed in a trench or groove configuration is provided with protection against voltage breakdown by the formation of a shield region adjacent to the insulating layer which borders the gate of the transistor. The shield region is either more lightly doped than, or has a conductivity opposite to, that of the region in which it is formed, normally the drift or drain region, and it is formed adjacent to a corner on the boundary between the insulating layer and the drift or drain region, where voltage breakdown is most likely to occur.
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