Self-aligned structure and process for DMOS transistor
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United States of America Patent
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Dec 15, 1992
Issued Date -
N/A
app pub date -
Nov 22, 1991
filing date -
Nov 22, 1991
priority date (Note) -
Expired
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Abstract
Method and structure is disclosed for a high-density DMOS transistor with an improved body contact. The improvement comprises a self-aligned structure in combination with a body contact region which overdopes the source region in order to minimize the number of critical photoresist steps. The use of two dielectric spacers obviates the need for a separate contact mask.
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