Enhanced radiative zone-melting recrystallization method and apparatus
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Dec 22, 1992
Issued Date -
N/A
app pub date -
Sep 30, 1988
filing date -
Dec 4, 1985
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A method is provided for zone-melting-recrystallization (ZMR) to produce high quality substantially subboundary-free silicon-on-insulator (SOI) thin films by controlled radiant heating of the silicon film. Using this technique, a much wider experimental parameter range which improves the uniformity of the crystalline quality over the entire SOI film is possible.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully