Voltage variable capacitor
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United States of America Patent
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Dec 22, 1992
Grant Date -
N/A
app pub date -
Oct 15, 1991
filing date -
Oct 15, 1991
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A voltage variable capacitor (10) has as the base substrate a silicon wafer with a layer of high resistivity semiconductor material on top of the substrate. An insulating layer (16) of a metal oxide having a dielectric constant greater than the dielectric constant of the semiconductors (12), such as zirconium titanate, is formed on top of the high resistivity layer, and a metal electrode (18) is formed on the insulating layer (16). When the electrode is energized, a depletion layer (20) is formed in the high resistivity layer. By varying the voltage applied to the electrode, the capacitance of the device is altered.
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