Process and device for marking and cleaving plaquettes of monocrystalline semiconductor materials
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United States of America Patent
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Dec 29, 1992
Grant Date -
N/A
app pub date -
Jun 5, 1990
filing date -
Jun 7, 1989
priority date (Note) -
Expired
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Abstract
A process and device for marking and cleaving plaquettes of monocrystalline semiconducting materials is described. According to invention, in order to mark off a reference direction onto a plaquette of a monocrystalline semiconducting material having a low hardness, an impression (1) is formed on the useful face of the plaquette and in a non useful area of that face, the impression bringing into view at least one direction from which the reference direction (9, 11, 13) is deduced, and the latter is marked off by means of a line on the non useful area. Since the reference direction corresponds to a cleavage plane of the plaquette, the latter, in addition, is cleaved by tracing a cleavage line along the reference direction on the other face of the plaquette.
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