Method of making an optical component by ion implantation
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United States of America Patent
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Dec 29, 1992
Grant Date -
N/A
app pub date -
Dec 14, 1990
filing date -
Dec 18, 1989
priority date (Note) -
Expired
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Abstract
An optical electronic component, in which strip waveguides of limited depth and lateral width are formed in undoped dielectric substrate, e.g. an undoped crystal, by implantation of rare-earch ions or ions of transition metals, preferably laser-active ions with energies of 50 keV to 10 MeV.
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