Method of passivating etched mirror facets of semiconductor laser diodes
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United States of America Patent
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Jan 5, 1993
Grant Date -
N/A
app pub date -
May 30, 1991
filing date -
Sep 14, 1990
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Abstract
A method of passivating etched mirror facets of semiconductor laser diodes which enhances device reliability. The etched mirror facet is first subjected to a weet-etch process to substantially remove any native oxide as well as any surface layer which may have been mechanically damaged during the preceding mirror etch process. Then, a passivation pre-treatment is applied whereby any residual oxygen is removed and a sub-monolayer is formed which permanently reduces the non-radiative recombination of minority carriers at the mirror facet. Finally, the pre-treated mirror surface is coated with a passivation layer to avoid any environmental effect on the mirror.
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