Capacitor-carrying semiconductor module
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United States of America Patent
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Jan 5, 1993
Grant Date -
N/A
app pub date -
Feb 7, 1992
filing date -
Feb 8, 1991
priority date (Note) -
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Abstract
Noise generated at high frequencies at the time of simultaneous switchings of logical circuits is reduced by lowering an inductance from LSI to a capacitor formed on a substrate. The capacitor is formed to ensure that an inductance from a bonding pad for the LSI loaded on the substrate to an electrode of the capacitor is 0.05 nanohenry. The lower inductance from the LSI to the capacitor allows a reduction in the amount of the noise at high frequencies among those generated in power supply system, whereby the rising time of signals is made shorter, and the speed of arithmetic operation can be increased.
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