Deposition of highly-oriented PTFE films and uses therefor
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United States of America Patent
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Jan 19, 1993
Grant Date -
N/A
app pub date -
Jun 5, 1989
filing date -
Jun 5, 1989
priority date (Note) -
Expired
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Abstract
Broadly the invention is a method for forming a highly-oriented crystal structure on a substrate in a known orientation comprising the steps of forming a film of highly-oriented poly(tetrafluoroethylene) with an orientation angle of less than 20.degree. on a surface of the substrate with its nominal orientation director along a desired orientation director and then depositing a crystal-forming material on the highly-oriented poly(tetrafluoroethylene) to form the structure. Specific examples include a method for growing a highly-oriented crystal on filament substrates, a method for producing extruded polymer articles (fibers, tapes, and solids) containing oriented crystal growth to improve the characteristics thereof, and a method for storing and retrieving data.
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