Method of fabricating a trapping-mode
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United States of America Patent
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Jan 26, 1993
Issued Date -
N/A
app pub date -
Aug 2, 1991
filing date -
Dec 5, 1985
priority date (Note) -
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Abstract
Photodetectors that produce detectivities close to the theoretical maximum detectivity include an electrically insulating substrate carrying a body of semiconductor material that includes a region of first conductivity type and a region of second conductivity type where the region of first conductivity type overlies and covers the junction with the region of second conductivity type and where the junction between the first and second regions separates minority carriers in the region of second conductivity type from majority carriers in the region of first conductivity type. These photodetectors produce high detectivities where radiation incident on the detectors has wavelengths in the range of about 1 to about 25 microns or more, particularly under low background conditions.
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