Compound semiconductor pellet, and method for dicing compound semiconductor wafer

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United States of America Patent

PATENT NO 5182233
SERIAL NO

07771850

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Abstract

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A compound semiconductor pellet has a zincblende crystal structure and is formed of a III-V compound semiconductor, such as GaAs. The major surface of the pellet and side surfaces thereof are both {100} planes. To obtain this type of pellet, [010] and [001] directions are selected as dicing directions. In the case of a crystal having a zincblende crystal structure, a direction which forms 45.degree. with reference to a cleavage plane of the crystal is selected as a dicing direction.

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Patent Owner(s)

Patent OwnerAddress
KABUSHIKI KAISHA TOSHIBAKAWASAKI-SHI KANAGAWA 212-0013

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Inoue, Kazuhiko Yokohama, JP 172 1317

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