Plasma processing method and apparatus using electron cyclotron resonance

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United States of America Patent

PATENT NO 5182495
SERIAL NO

07619338

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Abstract

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In a plasma processing apparatus using ECR, faces in contact with plasma excepting a substance to be processed are covered by an insulating material. By such configuration, discharge caused between the plasma and the substance to be processed in plasma processing is prevented beforehand.

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Patent Owner(s)

Patent OwnerAddress
HITACHI LTD6-6 MARUNOUCHI 1-CHOME CHIYODA-KU TOKYO 100-8280

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Fukuda, Takuya Hitachi, JP 83 1052
Ohue, Michio Hitachi, JP 17 297
Sonobe, Tadasi Iwaki, JP 16 351

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