Plasma processing method and products thereof

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United States of America Patent

PATENT NO 5185179
SERIAL NO

07417311

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Abstract

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Carbonaceous films are coated on a surface by chemical vapor reation. In advance of the deposition of carbonaceous film, a silicon nitride film as coated on the surface to prevent interdiffusion between the carbonaceous film and the underlying surface.

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Patent Owner(s)

Patent OwnerAddress
SEMICONDUCTOR ENERGY LABORATORY CO LTD398 HASE ATSUGI-SHI KANAGAWA 2430036 ?2430036

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hayashi, Shigenori Atsugi, JP 85 3991
Ishida, Noriya Atsugi, JP 14 240
Itou, Kenji Zama, JP 28 272
Kadono, Masaya Atsugi, JP 21 275
Kojima, Masahiro Atsugi, JP 133 968
Sasaki, Mari Atsugi, JP 20 199
Takeyama, Junichi Atsugi, JP 12 771
Yamazaki, Shunpei Tokyo, JP 7534 239327

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