Importance

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Abstract

The remover solution of the invention comprises (A) from 35 to 80% by weight of an alcoholic solvent such as ethylene glycol monoethyl ether, (B) from 10 to 40% by weight of an organic solvent which is a halogenated hydrocarbon solvent, e.g., 1,2-dichlorobenzene and methylene chloride, an ether solvent, e.g., tetrahydrofuran, or an aromatic solvent, e.g., benzene and xylene, and (C) from 0.1 to 25% by weight of a quaternay ammonium compound such as tetramethyl ammonium hydroxide and trimethyl hydroxyethyl ammonium hydroxide. Different from conventional remover solutions which only can swell cured photoresist compositions, the inventive remover solution has a power to completely dissolve a cured photoresist layer to give a quite satisfactory result in the removing works of patterned photoresist layers in the manufacture of semiconductor devices.

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First Claim