Method for forming a dielectric thin film or its pattern of high accuracy on a substrate
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United States of America Patent
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Feb 9, 1993
Issued Date -
N/A
app pub date -
Apr 24, 1991
filing date -
Jul 26, 1988
priority date (Note) -
Expired
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Abstract
A method and apparatus for forming a dielectric thin film or pattern thereof is provided in which a positive or negative resist of a desired pattern if formed on various substrates including a semiconductor substrate by contact of the resist with a liquefied gas or super critical fluid of CO.sub.2, NH.sub.3 or the like. Alternatively, a thin film of an organic or inorganic compound dissolved or dispersed in an organic solvent which has been formed on substrate becomes substantially free of any organic matter or functional groups by contact with the liquefied gas or super critical fluid. Semiconductor devices of high performance and high reliability are ensured.
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