Barrier layers for ferroelectric and pzt dielectric on silicon
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United States of America Patent
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Feb 16, 1993
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app pub date -
Jul 27, 1992
filing date -
Jul 27, 1992
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Abstract
The present invention introduces an effective way to produce a thin film capacitor utilizing a high dielectric constant material for the cell dielectric through the use of a single transition metal, such as Molybdenum, for a bottom plate electrode which oxidizes to form a highly conducting oxide. Using Molybdenum, for example, will make a low resistive contact to the underlying silicon since Molybdenum reacts with silicon to form MoSix with low (<500 .mu..OMEGA.-cm) bulk resistance. In addition, Mo/MoSix is compatible with present ULSI process flow or fabricating DRAMs and the like.
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