Method for making bipolar transistor by self-aligning the emitter to the base contact diffusion
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United States of America Patent
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Feb 23, 1993
Issued Date -
N/A
app pub date -
Apr 28, 1992
filing date -
Feb 1, 1991
priority date (Note) -
Expired
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Abstract
A semiconductor structure having a high precision analog polysilicon capacitor with a self-aligned extrinsic base region of a bipolar transistor is disclosed. The structure is formed by simultaneously forming the dielectric layer of the capacitor with the formation of the base region of the bipolar transistor. A final oxidation step in the formation of the capacitor causes the base region to diffuse to form a self-aligned extrinsic base diffusion region.
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