Semiconductor device and production method thereof
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United States of America Patent
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Feb 23, 1993
Issued Date -
N/A
app pub date -
Feb 4, 1991
filing date -
Apr 21, 1987
priority date (Note) -
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status (Latency Note)
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Abstract
A semiconductor device is produced through processes that; ionized material is poured into a predetermined depth of a silicon substrate so as to be made into etching stopper layer, a predetermined area of the silicon substrate is etched up to the depth of the etching stopper layer so as to form a concave portion, a compound semiconductor chip is accommodated in the concave portion, insulating film is formed covering a space between the surrounding wall of the concave portion and the side wall of the compound semiconductor chip so as to be patterned, and that a second thin film circuit is so formed on the patterned insulating film as to connect between the electrodes on the compound semiconductor chip and a first thin film circuit which is previously formed on the surface of the silicon substrate.
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