Method for producing a doped polycide layer on a semiconductor substrate

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United States of America Patent

PATENT NO 5190888
SERIAL NO

07779408

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Abstract

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Method for producing a doped polycide layer on a semiconductor substrate. A polycide layer (14) is formed by producing a metal silicide layer (13a) on a polysilicon layer (12a). After the formation thereof, the polycide layer (14) is doped to an ulltimate value of the dopant concentration by an implantation. The polysilicon layer can be pre-doped. The method is particularly suited for the manufacture of p.sup.+ -doped polycide gates in a salicide process.

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Patent Owner(s)

Patent OwnerAddress
INFINEON TECHNOLOGIES AG85579 NEUBIBERG

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Burmester, Ralf Ratingen, DE 2 24
Schwalke, Udo Williston, VT 30 441

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