Importance

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Abstract

A magnetic field sensor, having a charge-coupled device formed in a semiconductor region is disclosed. The magnetic field sensor has first and second contact zones, made of a heavily doped semiconductor material of a first conductivity type, located on an outer surface of the semiconductor region which is made of a semiconductor material of a second conductivity type. The magnetic field sensor also has an insulating layer, located on the outer surface of the semiconductor region, which has passages for sensor connections associated with each contact zone. The charge-coupled device has a plurality of gate electrodes located on the insulating layer which are arranged perpendicularly to the desired direction of charge propagation through the charge-coupled device. One end of at least one centrally located electrode at least partially overlaps the first contact zone while another end at least partially overlaps the second contact zone.

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First Claim