High photosensitive depletion-gate thin film transistor

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United States of America Patent

PATENT NO 5196911
SERIAL NO

07674451

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Abstract

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A thin film transistor photodetector which has the combined merits of the photodiode and the photoconductor without their problems. The resulting device of this process has a accumulation gate on the bottom of the active semiconductor layer and a transparent depletion gate on the top of the active semiconductor layer. The gate length of the depletion gate is smaller than that of the accumulation gate.

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Patent Owner(s)

Patent OwnerAddress
INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTECHUTUNG HSINCHU 310401
HANNSTAR DISPLAY CORP12F NO 480 RUEIGUANG RD NEIHU DISTRICT TAIPEI CITY 114
AU OPTRONICS CORPNO 1 LI-HSIN ROAD 2 SCIENCE-BASED INDUSTRIAL PARK HSIN-CHU
CHUNGHWA PICTURE TUBES LTDNO 22 SEC 3 CHUNG SHAN N RD TAIPEI ROC
PRIME VIEW INTERNATIONAL CO LTDHSINCHU
QUANTA DISPLAY INCNO 189 HWA YA 2ND RD KUEI SHAN HSIANG TAO YUAN SHIEN R O C
TOPPOLY OPTOELECTRONICS CORPNO 12 KA-CHUNG ROAD CHU-NAN MIAO-LI COUNTY
CHI MEI OPTOELECTRONICS CORPNO 1 CHI-YEH ROAD TAINAN SCIENCE-BASED INDUSTRAL PARK TAINAN COUNTY

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Wu, Biing-Seng Tainan, TW 105 916

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