High rate chemical vapor deposition of carbon films using fluorinated gases
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United States of America Patent
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Mar 30, 1993
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N/A
app pub date -
Mar 15, 1991
filing date -
Mar 15, 1991
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Abstract
A high rate, low-temperature deposition of amorphous carbon films is produced by PE-CVD in the presence of a fluorinated or other halide gas. The deposition can be performed at less than 100.degree. C., including ambient room temperature, with a radio frequency plasma assisted chemical vapor deposition process. With less than 6.5 atomic percent fluorine incorporated into the amorphous carbon film, the characteristics of the carbon film, including index of refraction, mass density, optical clarity, and chemical resistance are within fifteen percent (15%) of those characteristics for pure amorphous carbon films, but the deposition rates are high.
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