Method of highly compact EPROM and flash EEPROM devices
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United States of America Patent
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Mar 30, 1993
Issued Date -
N/A
app pub date -
Jul 17, 1989
filing date -
Jun 8, 1988
priority date (Note) -
Expired
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Abstract
Structures, methods of manufacturing and methods of use of electrically programmable read only memories (EPROM) and flash electrically erasable and programmable read only memories (EEPROM) include split channel and other cell configurations. An arrangement of elements and cooperative processes of manufacture provide self-alignment of the elements. An intelligent programming technique allows each memory cell to store more than the usual one bit of information. An intelligent erase algorithm prolongs the useful life of the memory cells. Use of these various features provides memory having a very high storage density and a long life, making it particularly useful as a solid state memory in place of magnetic disk storage devices in computer systems.
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