Process for preparing a semiconductor device using hydrogen fluoride and nitrogen to remove deposits
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United States of America Patent
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Apr 6, 1993
Grant Date -
N/A
app pub date -
Oct 8, 1991
filing date -
Nov 15, 1990
priority date (Note) -
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Abstract
A process for preparing a semiconductor device includes the steps of forming a lower wiring of aluminum or an aluminum alloy on a semiconductor substrate, coating said lower wiring with an interlayer dielectric film, forming via-holes in said interlayer dielectric film through a patterned resist by a reactive ion etching method, removing deposits produced by said method in said via-holes and a portion of said interlayer dielectric film around said deposits by means of hydrogen fluoride gas and nitrogen gas in the presence or absence of water vapor, and then forming an upper wiring on said interlayer dielectric film.
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