Method of forming three-dimensional features on substrates with adjacent insulating films

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United States of America Patent

PATENT NO 5202286
SERIAL NO

07745229

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A method of producing a three-dimensional feature on a substrate and adjacent electrically insulating films comprising producing a resist on a portion of a surface of a substrate; etching the substrate to remove portions of the substrate not covered by the resist, leaving an etched surface on part of the substrate, and producing a three-dimensional feature having side walls intersecting the etched surface of the substrate underlying and undercutting the resist so that the resist includes overhanging portions spaced from the etched surface of the substrate, the three-dimensional feature having a height between the resist and the etched surface of the substrate; depositing, in a chemical vapor deposition process at a relatively low temperature, a discontinuous electrically insulating film to a thickness no greater than the height of the three-dimensional feature in a first segment on the resist and in a second segment, discontinuous from the first segment, on the etched surface of the substrate adjacent the three-dimensional feature, including on the etched surface of the substrate between the etched surface of the substrate and the overhanging portions of the resist; and lifting off the resist and the first segment of the insulating film disposed on the resist to produce a flattened surface including the second segment of the insulating film and the three-dimensional feature.

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Patent Owner(s)

Patent OwnerAddress
MITSUBISHI DENKI KABUSHIKI KAISHATOKYO

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Nakatani, Mitsunori Itami, JP 21 261

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