Solid-state image sensor output MOSFET amplifier with MOSFET load
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United States of America Patent
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Apr 13, 1993
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N/A
app pub date -
Jun 3, 1992
filing date -
Jun 4, 1991
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Abstract
There is provided a solid-state image sensor which can optimize the I-V characteristics of MOS transistors on drive side and load side, and which can improve the sensitivity by maximizing the small-signal AC gain of a source follower amplifier. According to one embodiment of the invention, a CCD solid-state image sensor has a floating diffusion type charge detecting amplifier composed of at least one drive side MOS transistor and at least one load side MOS transistor. In a substrate of one conductivity type, there are formed two wells of the opposite conductivity type independently. The drive side MOS transistor is formed in the first well which is deeper from the top surface of the semiconductor substrate. The load side MOS transistor is formed in the shallower second well. It is possible to further improve the AC gain by depleting or neutralizing the first well for the drive MOS transistor, and at the same time neutralizing the second well for the load MOS transistor.
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