Microwave plasma etching and deposition method employing first and second magnetic fields
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United States of America Patent
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Apr 20, 1993
Issued Date -
N/A
app pub date -
Sep 27, 1991
filing date -
Apr 27, 1987
priority date (Note) -
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Abstract
A plasma processing apparatus and method is equipped with a vacuum chamber, helmoltz coils, Ioffe bars, a microwave generator and gas feeding systems. An auxiliary magnet is further provided in order to strengthen the magnetic field in the vacuum chamber to produce centrifugal drifting force which confine the plasma gas about the center position of the vacuum chamber. Specifically, the method includes establishing a first magnetic field in the vacuum chamber substantially parallel to the direction of propagation of microwaves emitted in the chamber and establishing a second magnetic field substantially perpendicular to the first magnetic field. A substrate in the chamber for plasma processing is placed so that a surface of the substrate is substantially perpendicular to the direction of the first magnetic field and parallel to the direction of the second.
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