Gate control circuit for MOS transistor
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United States of America Patent
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-
Apr 20, 1993
Grant Date -
N/A
app pub date -
Jul 16, 1990
filing date -
Jul 17, 1989
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A gate control circuit is provided for a power MOS transistor (T) having an input capacitance (C.sub.e). The transistor gate is in series with an inductance (L). The inductance is initially precharged. First switch, element (T2, T3) transfers the energy stored in the inductance towards the input capacitance during a switching on condition of the power MOS transistor. Second switch element (T1, T4) transfers back the energy stored in the input capacitance back to the inductance during a switching off condition.
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