Series ferroelectric capacitor structure for monolithic integrated circuits and method
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United States of America Patent
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Apr 27, 1993
Grant Date -
N/A
app pub date -
Dec 12, 1991
filing date -
Dec 12, 1991
priority date (Note) -
Expired
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Abstract
A ferroelectric capacitor for a memory device including a substrate, a bottom electrode and a top electrode. Between the bottom and top electrodes is either an alternating plurality of layers of ferroelectric material and intermediate electrodes or a plurality of layers of ferroelectric material. A method for forming the same through establishing one layer over the other is also disclosed.
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